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FW344A Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
Ordering number : EN8998A
FW344A
SANYO Semiconductors
DATA SHEET
FW344A
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch : RDS(on)1=49mΩ(typ.)
Pch : RDS(on)1=78mΩ(typ.)
• 4V drive
• Halogen free compliance
• Nch+Pch MOSFET
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel P-channel
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (2000mm2×0.8mm)
30
±20
4.5
5
18
1.4
1.7
150
--30
V
±20
V
--3.5
A
--4
A
--14
A
W
W
°C
Storage Temperature
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
unit : mm (typ)
7072-001
4.9
0.22
8
5
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
Packing Type : TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOIC8
TL
Electrical Connection
8
7
6
5
FW344
A LOT No.
1
2
3
4
http://semicon.sanyo.com/en/network
31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/6