FW306 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – N- Channel Silicon MOS FET High Speed Switching

FW306
N- Channel Silicon MOS FET
High Speed Switching
TENTATIVE
Features
• High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and
4-volt-drive N- / P- channel / MOSFETs.
• Low ON-state resistance.
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Electrical Characteristics / Ta=25°C
(N-channel)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10µS, dutycycle≤1%
Mounted on ceramic board
(1000mm² ! 0.8mm) 1unit
Mounted on ceramic board
(1000mm² ! 0.8mm)
N-channel
30
±25
5
32
P-channel unit
30
V
±25
V
--3
A
--32
A
1.7
W
2.0
W
150
°C
--55 to ±150
°C
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on) 1
RDS(on) 2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA , VGS=0
VDS=30V , VGS=0
VGS=±20V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=5A
ID=5A , VGS=10V
ID=2A , VGS=4V
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz
See Specified Test
Circuit
IS=5A , VGS = 0
min typ
max unit
30
V
100
µA
±10
µA
1.0
2.5
V
5
8
S
50
65
mΩ
84
120
mΩ
460
pF
340
pF
85
pF
13
ns
300
ns
30
ns
50
ns
1.0
1.2
V
(P-channel)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on) 1
RDS(on) 2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=--1mA
VDS=--30V
VGS=±20V
VDS=--10V
VDS=--10V
ID=--3A
ID=--2A
VDS=--10V
VDS=--10V
VDS=--10V
, VGS=0
, VGS=0
, VDS=0
, ID=--1mA
, ID=--3A
, VGS=--10V
, VGS=--4V
, f=1MHz
, f=1MHz
, f=1MHz
See Specified Test
Circuit
IS=--3A , VGS = 0
min typ
max unit
--30
V
--100
µA
±10
µA
--1.0
--2.5
V
3
5
S
110
160
mΩ
200
320
mΩ
460
pF
350
pF
80
pF
13
ns
150
ns
30
ns
50
ns
--1.0 --1.2
V
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990401TM2fXHD