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FW250 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channl Silicon MOSFET Ultrahigh-Speed Switching Applications
Ordering number : ENN7548
Features
• Low ON-resistance.
• Ultrahigh-speed switcing.
• 4V drive.
FW250
N-Channl Silicon MOSFET
FW250
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2129
[FW250]
8
5
Specifications
Absolute Maximum Ratings at Ta=25°C
1
4
5.0
0.595 1.27 0.43
1 : Source1
2 : Gate1
0.2 3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
duty cycle≤1%
duty cycle≤1%
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board(2000mm2!0.8mm)1unit, PW≤10s
Mounted on a ceramic board(2000mm2!0.8mm), PW≤10s
Ratings
Unit
60
V
±20
V
3
A
3.5
A
5.5
A
20
A
1.8
W
2.2
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W250
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4V
min
60
1.2
2.8
Ratings
Unit
typ
max
V
1 µA
±10 µA
2.6
V
4
S
110
145 mΩ
150
215 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91603 TS IM TA-100553 No.7548-1/4