FW231A-TL-E Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA0515
FW231A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FW231A ^{General-Purpose Switching Device}
Applications
Features
• 2.5V drive.
• _{Composite type, facilitating high-density mounting.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board (1500mm²!0.8mm) 1unit, PW≤10s
Mounted on a ceramic board (1500mm²!0.8mm) 1unit, PW≤10s
Ratings
Unit
20
V
±10
V
8
A
9
A
52
A
2.3
W
2.5
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking :W231A
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=4.5V
ID=8A, VGS=4V
ID=4A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
20
0.5
9
10
11
12
Ratings
Unit
typ
max
V
1 µA
±10 µA
1.3
V
15
S
17
23 mΩ
18
24 mΩ
20
33 mΩ
1530
pF
230
pF
215
pF
19
ns
225
ns
125
ns
125
ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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