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FW216A Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Ordering number : ENA0176A
FW216A
SANYO Semiconductors
DATA SHEET
FW216A
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch : RDS(on)1=49mΩ (typ.)
• 4.0V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle≤1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
Ratings
Unit
35
V
±20
V
4.5
A
18
A
1.6
W
2.2
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7072-001
4.9
0.22
8
5
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 2,500 pcs./reel
Packing Type : TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOIC8
TL
Electrical Connection
8
7
6
5
FW216
A LOT No.
1
2
3
4
http://semicon.sanyo.com/en/network
31412 TKIM/20112PA TKIM TC-00002686 No. A0176-1/4