FW211 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN5579A
N-Channel Silicon MOSFET
FW211
DC-DC Converter Applications
Features
· Low ON resistance.
· 2.5V drive.
Package Dimensions
unit:mm
2129
[FW211]
8
5
1
4
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
0.595 1.27 0.43
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm²Ã—0.8mm) 1unit
Mounted on a ceramic board (1000mm²Ã—0.8mm)
1:Source 1
2:Gate 1
0.2 3:Source 2
4:Gate 2
5:Drain 2
6:Drain 2
7:Drain 1
8:Drain 1
SANYO:SOP8
Ratings
Unit
20 V
±10 V
6A
52 A
1.7 W
2.0 W
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
Qgs
VDS=10V, VGS=10V, ID=1A
Qgd
VSD IS=5A, VGS=0
Ratings
Unit
min
typ
max
20
V
100 µA
±10 µA
0.4
1.3 V
9
15
S
27
35 mΩ
35
48 mΩ
750
pF
520
pF
300
pF
20
ns
200
ns
150
ns
150
ns
30
nC
5
nC
7
nC
1.0
1.2 V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-0861 No.5579-1/3