FW103 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number : EN5305A
P-Channel Silicon MOSFET
FW103
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance
• Ultrahigh-speed switching.
• Composite type with two 4V-drive P-channel MOSFETs
facilitating high-density mounting.
• Matched pair capability.
Package Dimensions
unit: mm
2129-SOP8
[FW103]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board
(1000mm²Ã—0.8mm) 1unit
Total Dissipation
PT
Mounted on a ceramic board
(1000mm²Ã—0.8mm)
Channel Temperature
Tch
Storage temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
D-S Breakdown Voltage
V(BR)DSS
Zero-Gate-Voltage Drain Current IDSS
Gate-to-Source Leakage Current IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance yfs
Static Drain-to-Source
RDS(on)
ON-State Resistance
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–3A
ID=–3A, VGS=–10V
ID=–3A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Ratings
Unit
–30
V
±20
V
–3
A
–32
A
1.7
W
2.0
W
150
°C
–55 to +150
°C
Ratings
Unit
min typ max
–30
V
–100 µA
±10 µA
–1.0
–2.5 V
2
4
S
95 125 mΩ
150 205 mΩ
550
pF
370
pF
70
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0255 No.5305-1/3