FTS2001 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN5694
N-Channel Silicon MOSFET
FTS2001
DC-DC Converter Applications
Features
· Low ON resistance.
· 2.5V drive.
· Mount height 1.1mm.
Package Dimensions
unit:mm
2147
3.0
0.975
0.65
[FTS2001]
8
5
1
4
0.25
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm²Ã—0.8mm)
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source "Miller" Charge
Gate-to-Drain Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
Qgs
VDS=10V, VGS=10V, ID=5A
Qgd
VSD IS=5A, VGS=0
1:Drain
2:Source
3:Source
4:Gate
5:Drain
0.125 _6:Source
7:Source
8:Drain
SANYO:SOP8
Ratings
Unit
20 V
±10 V
5A
30 A
1.5 W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min
typ
max
20
V
100 µA
±10 µA
0.4
1.3 V
9
15
S
23
30 mΩ
32
46 mΩ
750
pF
520
pF
300
pF
20
ns
200
ns
150
ns
150
ns
30
nC
5
nC
7
nC
1.0
1.2 V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-1232 No.5694-1/3