FTD2019A Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET Transistor Load Switching Applications

Ordering number : ENN7911A
FTD2019A
FTD2019A ^{N-Channel Silicon MOSFET Transistor}
Load Switching Applications
Features
• Low ON-resistance.
• _{2.5V drive.}
• _{Mount height 1.1mm.}
• _{Composite type, facilitating high-density mounting.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm²!0.8mm)1unit
Mounted on a ceramic board (1000mm²!0.8mm)
Ratings
Unit
30
V
±12
V
6
A
40
A
1.3
W
1.4
W
150
°C
--55 to +150
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : D2019A
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS= ±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=4V
ID=3A, VGS=3.1V
ID=3A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
30
0.5
7.8
Ratings
Unit
typ
max
V
1 µA
±10 µA
1.3
V
13
S
19
26 mΩ
21
32 mΩ
23
34 mΩ
1430
pF
195
pF
190
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61005PA MS IM TB-00001472 / 93004 TS IM TB-00000046 No.7911-1/4