FTD2017C Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1930
FTD2017C
SANYO Semiconductors
DATA SHEET
FTD2017C
Features
• _{Low ON-resistance}
• _{Mount heigt 1.1mm}
• _{Drain common specifications}
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
• _{2.5V drive}
• _{Composite type, facilitating high-density mounting}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1000mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (1000mm²Ã—0.8mm)
Ratings
Unit
20
V
±12
V
6
A
40
A
1.35
W
1.4
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7006A-005
3.0
8
5
0.125
1
4
0.25
0.65
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
SANYO : TSSOP8
Product & Package Information
• Package
: TSSOP8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
LOT No.
D2017C
TL
Electrical Connection
8765
12 3 4
http://semicon.sanyo.com/en/network
30211PA TKIM TC-00002574 No. A1930-1/4