FTD1029 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENA0532
FTD1029
SANYO Semiconductors
DATA SHEET
FTD1029
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• _{4V drive.}
• Mounting height 1.1mm.
• _{Composite type, facilitating high-density mounting.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm²!0.8mm) 1unit
Mounted on a ceramic board (1000mm²!0.8mm)
Ratings
Unit
--30
V
±20
V
--3
A
--15
A
0.8
W
1.0
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : D1029
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
min
--30
--1.2
2.4
Ratings
Unit
typ
max
V
--1 µA
±10 µA
--2.6
V
4
S
56
73 mΩ
100
140 mΩ
117
164 mΩ
570
pF
100
pF
85
pF
Continued on next page.
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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