FSS218 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENA0189A
FSS218
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FSS218 ^{General-Purpose Switching Device}
Applications
Features
• _{Motor drive applications.}
• _{Inverter drive applications.}
• _{4V drive.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board (2000mm²!0.8mm), PW≤10s
Ratings
Unit
35
V
±20
V
8
A
8.5
A
32
A
1.8
W
150
°C
--55 to +150
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : S218
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=10V
ID=4A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
35
1.5
5.4
Ratings
Unit
typ
max
V
1 µA
±10 µA
2.5
V
9
S
20
26 mΩ
38
54 mΩ
1050
pF
200
pF
140
pF
17
ns
65
ns
75
ns
45
ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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