FSS162 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENA0348
FSS162
SANYO Semiconductors
DATA SHEET
FSS162
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• _{4V drive.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board (1200mm²!0.8mm), PW≤10s
Ratings
Unit
--30
V
±20
V
--8
A
--10
A
--52
A
2.4
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : S162
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS= ±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--8A
ID=--8A, VGS=--10V
ID=--4A, VGS=--4.5V
ID=--4A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
min
--30
--1.0
9
Ratings
Unit
typ
max
V
--1 µA
±10 µA
--2.4
V
15
S
18
24 mΩ
26
37 mΩ
30
43 mΩ
2500
pF
460
pF
370
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
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SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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