FP502 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN5263
FP502
N-Channel Silicon MOSFET
Silicon Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a high-speed N-channel
MOSFET and a low-forward voltage Schottky
barrier diode contained in the PCP4 package, saving
the mount space greatly.
Package Dimensions
unit:mm
2132
[FP502]
1:Source, Anode
2:Common (Drain,
Cathode)
3:Source, Anode
4Common (Drain,
Cathode)
5:Gate
6:Common (Drain,
Cathode)
7:Common (Drain,
Cathode)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Allowable Power Dissipation
PD
PD
Storage Temperature
Tstg
[MOS block]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Channel Temperature
VDSS
VGSS
ID
IDP
Tch
[Diode block]
Average Rectified Current
IO
Conditions
Tc=25˚C, 1 unit
Mounted on ceramic board (250mm²Ã—0.8mm) 1 unit
PW≤10µs, duty cycle ≤1%
Electrical Characteristics at Ta=25˚C
Parameter
[MOS block]
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditons
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=10.4V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=500mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1NHZ
VDS=10V, f=1MHz
SANYO:PCP4
(Bottom view)
Ratings
Unit
3.5 W
1.5 W
–55 to +150 _˚C
11 V
±10 V
2A
8A
150 ˚C
500 mA
Ratings
Unit
min typ max
11
V
400 µA
±10 µA
1.0
4.0 V
1.2
2.2
S
140 200 mΩ
200 320 mΩ
150
pF
200
pF
45
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4