FP301 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN4539
FP301
TR:NPN Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with 2 devices (NPN transistor and
Schottoky barrier diode) contained in one package,
facilitating high-density mounting.
· The FP301 is formed with a chip being equivalent to
the 2SD1621 and a chip being equivalent to the
SB07-03C placed in one package.
Package Dimensions
unit:mm
2099A
[FP301]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Mounted on ceramic board (250mm²Ã—0.8mm)
50Hz sine wave, 1 cycle
Electrical Connection
1:Base
2, 7:Collector
3:Emitter Common
4, 6:Collector
5:Base
(Top view)
1:Base
2, 7:Collector
3:Emitter Common
4, 6:Collector
5:Base
SANYO:PCP5
(Bottom view)
Ratings
Unit
30 V
25 V
6V
2A
5A
400 mA
0.8 W
150 ˚C
30 V
35 V
700 mA
5A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/53094TH (KOTO) BX-0215 No.4539-1/4