FP215 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Frequency Amp, Differential Amp Applications

Ordering number:EN4698
FP215
PNP Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp,
Differential Amp Applications
Features
· Composite type with 2 transistors contained in the
PCP package currently in use, improving the mount-
ing efficiency greatly.
· The FP215 is formed with two chips, being equiva-
lent to the 2SA1724, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2108A
[FP215]
Electrical Connection
Specifications
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
(Top view)
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
SANYO:PCP5
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Conditions
Mounted on ceramic board (250mm²Ã—0.8mm) 1 unit
Mounted on ceramic board (250mm²Ã—0.8mm)
Ratings
Unit
–30 V
–20 V
–3 V
–300 mA
–600 mA
0.75 W
1.0 W
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
ICBO
IEBO
hFE1
hFE2
hFE1
(small-large)
VCB=–20V, IE=0
VEB=–2V, IC=0
VCE=–5V, IC=–50mA
VCE=–5V, IC=–3000mA
VCE=–5V, IC=–50mA
Base-to-Emitter Voltage Difference
VBE
VCE=–5V, IC=–100mA
(large-small)
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
fT
Cob
Cre
VCE(sat)
VBE(sat)
VCE=–5V, IC=–50mA
VCB=–10V, f=1MHz
VCB=–10V, f=1MHz
IC=–100mA, IB=–10mA
IC=–100mA, IB=–10mA
Note:The specifications shown above are for individual transistor.
Ratings
Unit
min
typ max
–0.1 µA
–1.0 µA
15
100
5
0.6 0.93
3.0
25 _mV
1.5
GHz
4.9
pF
4.4
pF
–0.4 –1.0 V
–0.9 –1.2 V
However, the DC Current Gain Ratio and Base-to-Emitter Voltage Difference are for the paired transistors.
Marking:215
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3