FP213 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor Motor Driver Applications

Ordering number:EN4724
FP213
PNP Epitaxial Planar Silicon Transistor
Motor Driver Applications
Features
· Composite type with 2 PNP transistors facilitating
high-density mounting.
· The FP213 is composed of 2 chips, each being
equivalent to the 2SB1397, placed in one package.
Package Dimensions
unit:mm
2097A
[FP213]
Electrical Connection
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
Specifications
(Top view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Electrical Characteristics at Ta=25˚C
Conditions
Mounted on ceramic board (250mm²Ã—0.8mm) 1 unit
Mounted on ceramic board (250mm²Ã—0.8mm)
Parameter
Collector Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Diode Forward Voltage
Base-to-Emitter Resistance
Marking:213
Symbol
Conditons
ICBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO1
V(BR)CEO2
VF
RBE
VCB=–20V, IE=0
VCE=–2V, IC=–0.5A
VCE=–2V, IC=–2A
VCE=–2V, IC=–0.5A
VCB=–10V, f=1MHz
IC=–1A, IB=–50mA
IC=–1A, IB=–50mA
IC=–10µA, IE=0
IC=–10mA, RBE=∞
IE=–10mA, RBE=∞
IF=0.5A
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
SANYO:PCP5
(Bottom view)
Ratings
Unit
–25 V
–20 V
–6 V
–2 A
–4 A
–400 mA
0.8 W
1.1 W
150 ˚C
–55 to +150 ˚C
Ratings
min typ
70
50
300
40
–0.25
–25
–25
–20
1.6
max
–1
–0.5
–1.5
–1.5
Unit
µA
MHz
pF
V
V
V
V
V
V
kΩ
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) BX-0491 No.4724-1/3