FP206 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Push-Pull Circuit Applications

Ordering number:EN4778
FP206
PNP/NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuit Applications
Features
· Composite type with a PNP transistor and an NPN
transistor in one package, facilitating high-density
mounting.
· The FP206 is composed of 2 chips, one being
equivalent to the 2SA1728 and the other 2SC4519,
placed in one package.
Package Dimensions
unit:mm
2097A
[FP206]
Electrical Connection
Specifications
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
(Top view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Mounted on ceramic board (250mm²Ã—0.8mm) 1unit
Mounted on ceramic board (250mm²Ã—0.8mm)
Electrical Characteristics at Ta=25˚C
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
SANYO:PCP5
(Bottom view)
( ) : PNP
Ratings
Unit
(–)50 V
(–)40 V
(–)5 V
(–)500 mA
(–)1 A
(–)100 mA
0.75 W
1.0 W
150 ˚C
–55 to +150 ˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking:206
Symbol
Conditons
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)3V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)200mA, IB=(–)10mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)200mA, IB=(–)10mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg
See specified Test Circuit
tf
See specified Test Circuit
Ratings
min typ
100
(–)50
(–)40
(–)5
350
(6)4
(–0.2)
0.15
(–)0.8
(60)60
(120)
150
(50)50
max
(–)0.5
(–)0.5
400
(–0.5)
0.45
(–)1.2
Unit
µA
µA
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) BX-1130 No.4778-1/4