FP205 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Push-Pull Circuit Applications

Ordering number:EN4494
FP205
PNP/NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuit Applications
Features
· Composite type with a PNP transistor and an NPN
transistor in one package, facilitating high-density
mounting.
· The FP205 is composed of 2 chips, one being
equivalent to the 2SA1416 and the other 2SC3646,
which are placed in one package.
Package Dimensions
unit:mm
2097A
[FP205]
Electrical Connection
Specifications
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
(Top view)
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
SANYO:PCP5
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Electrical Characteristics at Ta=25˚C
Conditions
Mounted on ceramic board (250mm²Ã—0.8mm) 1unit
Mounted on ceramic board (250mm²Ã—0.8mm)
( ) : PNP
Ratings
Unit
(–)120 V
(–)100 V
(–)6 V
(–)1 A
(–)2 A
(–)0.2 A
0.8 W
1.1 W
150 ˚C
–55 to +150 ˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking:205
Symbol
Conditons
ICBO
IEBO
hFE
fT
Cob
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)400mA, IB=(–)40mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)400mA, IB=(–)40mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg
See specified Test Circuit
tf
See specified Test Circuit
Ratings
min typ
140
120
(13)
8.5
(–0.2)
0.1
(–)0.85
(–)120
(–)100
(–)6
(80)80
(700)
850
(40)50
max
(–)100
(–)100
400
(–0.6)
0.4
(–)1.2
Unit
nA
nA
MHz
pF
pF
V
V
V
V
V
V
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) A8-9592 No.4494-1/4