FP203 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Push-Pull Circuits

Ordering number:EN4496
FP203
PNP/NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuits
Features
· Composite type with 2 transistors of PNP transistor
and NPN transistor,facilitating high-density mount-
ing.
· The FP203 is formed with chips, being equivalent to
the 2SB1122 and 2SD1622, placed in one package.
Package Dimensions
unit:mm
2097A
[FP203]
Electrical Connection
Specifications
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (PNP TR)
(Top view)
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (PNP TR)
SANYO:PCP5
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Mounted on ceramic board (250mm²Ã—0.8mm) 1unit
Mounted on ceramic board (250mm²Ã—0.8mm)
( ) : PNP
Ratings
Unit
(–)60 V
(–)50 V
(–)5 V
(–)1 A
(–)2 A
(–)0.2 A
0.75 W
1.0 W
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta=25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditons
ICBO
IEBO
hFE
fT
Cob
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)500mA, IB=(–)50mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)500mA, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg
See specified Test Circuit
tf
See specified Test Circuit
Ratings
min
typ
140
(–)60
(–)50
(–)5
150
(12)
8.5
(–180)
120
(–)0.9
40
(300)
350
30
max
(–)100
(–)100
400
(–400)
250
(–)1.2
Unit
nA
nA
MHz
pF
pF
mV
mV
V
V
V
V
ns
ns
ns
Marking:203
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH (KOTO) A8-9727 No.4496-1/4