FP108 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN5100
FP108
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP108 is formed with 2 chips, one being
equivalent to the 2SB1121 and the other the SB01-
015CP, placed in one package.
Package Dimensions
unit:mm
2088A
[FP108]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
SANYO:PCP4
(Bottom view)
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on ceramic board (250mm²Ã—0.8mm)
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
Marking:108
Electrical Connection
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
Ratings
Unit
–30 V
–25 V
–6 V
–2 A
–5 A
–400 mA
1.3 W
150 ˚C
–55 to +150 ˚C
15 V
17 V
1A
8A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/63095MO (KOTO) TA-0316 No.5100-1/4