FC808 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Speed Switching Composite Diode Cathode Common

Ordering number :EN4338A
FC808
Silicon Epitaxial Plannar Type
High-Speed Switching Composite Diode
(Cathode Common)
Features
· Composite type with 4 diodes contained in the CP
package currently in use, saving the mounting space
greatly.
· Fast switching speed.
Package Dimensions
unit:mm
1250A
[FC808]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO*
IFM*
P*
Tj
Tstg
10ms*
Note) *:Unit rating. The total rating is 150% of the unit rating.
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF
IF=10mA
IF=100mA
IR
VR=50V
VR=80V
C
VR=0V, f=1MHz
trr
IF=10mA, VR=6V, RL=5Ω, Irr=0.1Irp
Note) The specifications shown above are for each individual diode.
· Marking:808
Reverse Recovery Time Test Circuit
Electrical Connection
1:Anode
2:Anode
3:Anode
4:Cathode
5:Anode
SANYO:CP5
Ratings
Unit
85 V
80 V
2A
100 mA
300 mA
200 mW
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min typ max
0.72
1.0 V
0.92
1.2 V
0.1 µA
0.5 µA
4.0
7.0 pF
5.0 ns
1:Anode
2:Anode
3:Anode
4:Cathode
5:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/O3196GI/82093YH (KOTO) X-7219 No.4338-1/2