FC807 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Speed Switching Composite Diode Anode Common

Ordering number:EN4337A
FC807
Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
(Anode Common)
Features
· Composite type with 4diodes contined in the CP
package currently in use, improving the mouting
efficiency greatly.
· Fast switching speed.
Package Dimensions
unit:mm
1249A
[FC807]
1:Cathode
2:Cathode
3:Cathode
4:Anode
5:Cathode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO*
IFM*
P*
Tj
Tstg
10ms*
Note*:Unit rating. The total rating is 150% of the unit rating.
Electrical Characteristics at Ta = 25˚C
Conditions
SANYO:CP5
Ratings
Unit
85 V
80 V
2A
100 mA
300 mA
200 mW
150 ˚C
–55 to +150 ˚C
Parameter
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Symbol
Conditons
VF
IF=10mA
IF=100mA
IR
VR=50V
VR=80V
C
VR=0V, f=1MHz
trr
IF=10mA, VR=6V, RL=50Ω, irr=0.1Irp
Ratings
Unit
min typ max
0.72
1.0 V
0.88
1.2 V
0.1 µA
0.5 µA
4.5
9.0 pF
8.0 ns
Note:The specifications shown above are for individual diode.
Marking:807
Electrical Connection
Reverse Recovery Time Test Circuit
1:Cathode
2:Cathode
3:Cathode
4:Anode
5:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/12097GI/82093YH (KOTO) X-7218 No.4337-1/2