FC806 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 50V, 100mA Rectifier

Ordering number :EN3401A
FC806
Silicon Schottky Barrier Diode
50V, 100mA Rectifier
Features
· Low forward voltage (VF max=0.55V) .
· Fast reverse recorvery time (trr max=10ns) .
· Composite type with 2 diodes contained in the CP
package currently in use, saving the mounting space
greatly.
· The FC806 is formed with two chips, each being
equivalent to the SB01–05CP, placed in one package.
Package Dimensions
unit:mm
1236A
[FC806]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50MHz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Thermal Resistance
· Marking:806
trr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rth (j-a)
IR=50µA
IF=100mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Electrical Connection
1:Cathode
2:Cathode
3:Anode
4:No Contact
5:Anode
SANYO:CP5
Ratings
Unit
50 V
55 V
100 mA
2A
–55 to +125 ˚C
–55 to +125 ˚C
Ratings
min
typ
50
4.4
560
max
0.55
15
10
Unit
V
V
µA
pF
ns
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/O3196GI/8030MH, TA, TS No.3401-1/2