FC801 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Composite Diode for High-Speed Switching Applications

Ordering number :EN3107A
FC801
Silicon Epitaxal Planar Diode
Composite Diode
for High-Speed Switching Applications
Features
· Composite type with 4 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC801 is formed with two chips, each being
equivalent to the DCA015, placed in one package.
Package Dimensions
unit:mm
1232A
[FC801]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM 1µs
IO
IFM
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Intertermimal Capacitance
Reverse Recovery Time
VF
IF=10mA
IF=50mA
IF=100mA
IR
VR=50V
C
VR=0V, f=1MHz
trr
IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
Note) The specifications shown above are for each individual diode.
· Marking:801
Reverse Recovery Time Test Circuit
Electrical Connection
1:Cathode
2:Cathode
3:Anode
4:Cathode
5:Cathode
6:Anode
SANYO:CP6
Ratings
Unit
75 V
50 V
4A
100 mA
300 mA
150 ˚C
–50 to +150 ˚C
Ratings
Unit
min
typ max
0.72
1.0 V
0.82
1.0 V
0.88
1.2 V
100 nA
4.5
9.0 pF
8.0 ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/91694MO 8-4998/5169MO, TS No.3107-1/2