FC601 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN4658
FC601
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composed of a Shottky barrier diode and a PNP
transistor with built-in resistors, and contained in one
CP package, resulting in greatly improved circuit-
board using efficiency.
· The FC601 is composed of an equivalent chip to the
SB007-03CP and an equivalent chip to the RA104C
(R1=10kΩ, R2=47kΩ).
Package Dimensions
unit:mm
2105A
[FC601]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
Marking:601
Electrical Connection
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
SANYO:CP5
Ratings
Unit
–50 V
–50 V
–6 V
–100 mA
200 mW
150 ˚C
–55 to +150 ˚C
30 V
35 V
70 mA
2A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH (KOTO) B8-0026 No.4658-1/4