FC18 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High-Frequency Amp, AM Amp, Low-Frequency Amp Applications

Ordering number:EN4983
FC18
TR:NPN Epitaxial Planar Silicon Transistor
FET:N-Channel Junction Silicon FET
High-Frequency Amp, AM Amp,
Low-Frequency Amp Applications
Features
· Composed of 2 chips, one being equivalent to the
2SK2394 and the other the 2SC4639, in the
convertional CP package, improving the mounting
efficiency greatly.
· Drain and emitter are shared.
Electrical Connection
Package Dimensions
unit:mm
2122
[FC18]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
· Marking:18
Conditions
1:Collector
2:Gate
3:Source
4:Emitter/Drain
5:Base
SANYO:XP5
Ratings
Unit
15 V
–15 V
10 mA
50 mA
200 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
200 mW
300 mW
150 ˚C
–55 to +150 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/5