FC140 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Speed Switching Applications

Ordering number:EN3361
FC140
NPN Epitaxial Planar Silicon Composite Transistor
High-Speed Switching Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· Small output capacitance, high gain-bandwidth
product.
· The FC140 is formed with two chips, being equiva-
lent to the 2SC4452, placed in one package.
Package Dimensions
unit:mm
2074
[FC140]
Electrical Connection
B1:Base 1
E1:Emitter 1
E2:Emitter 2
C2:Collector 2
B2:Base 2
C1:Collector 1
Specifications
SANYO:CP6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
Unit
40 V
40 V
15 V
5V
200 mA
500 mA
40 mA
200 mW
300 mW
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditons
Collector Cutoff Current
ICBO VCB=20V, IE=0
Emitter Cutoff Current
IEBO VEB=3V, IC=0
DC Current Gain
hFE
VCE=1V, IC=10mA
DC Current Gain Ratio
hFE(small/ VCE=1V, IC=10mA
large)
Gain-Bandwidth Product
fT
VCE=10V, IC=10mA
Output Capacitance
Cob
VCB=5V, f=1MHz
C-E Saturation Voltage
VCE(sat) IC=10mA, IB=1mA
B-E Saturation Voltage
VBE(sat) IC=10mA, IB=1mA
C-B Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
C-E Breakdown Voltage
V(BR)CEO IC=1mA, RBE=∞
E-B Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
Turn-ON Time
ton
See specified Test Circuit.
Storage Time
tstg
See specified Test Circuit.
Turn-OFF Time
toff
See specified Test Circuit.
Note:The specifications shown above are for each individual transistor.
Ratings
Unit
min
typ max
0.1 µA
0.1 µA
90
240
0.6 0.98
450 750
MHz
1.4
4.0 pF
0.13 0.25 V
0.80 0.85 V
40
V
15
V
5
V
8.0
ns
6.0
ns
12
ns
Marking:140
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4180MO, TS No.3361-1/3