FC133 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Ordering number:EN3287
FC133
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
· On-chip bias resistances (R1=10kΩ, R2=47kΩ)).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC133 is formed with two chips, being equiva-
lent to the 2SA1563, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2066
[FC133]
Electrical Connection
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
Unit
–50 V
–50 V
–6 V
–100 mA
–200 mA
200 mW
300 mW
150 ˚C
–55 to +150 ˚C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistacne Ratio
Symbol
Conditons
ICBO
ICEO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=–40V, IE=0
VCB=–40V, IB=0
VEB=–5V, IC=0
VCE=–5V, IC=–5mA
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
IC=–10mA, IB=–0.5mA
IC=–10µA, IE=0
IC=–100µA, RBE=∞
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–5mA
R1/R2
Ratings
min
typ
–67
70
–50
–50
–0.5
–0.7
7
0.193
–88
200
5.1
–0.1
–0.7
–1.0
10
0.213
max
–0.1
–0.5
–125
–0.3
–0.9
–2.0
13
0.234
Unit
µA
µA
µA
MHz
pF
V
V
V
V
V
kΩ
Note:The specifications shown above are for each individual transistor.
Marking:133
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2190MO, TS No.3287-1/2