FC121 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Ordering number:EN3190
FC121
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
· On-chip bias resistances (R1=2.2kΩ, R2=10kΩ).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC121 is formed with two chips, being equiva-
lent to the 2SA1502, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2066
[FC121]
Electrical Connection
C1:Collector 1
C2:Collector 2
B2:Base2
EC:Emitter Common
B1:Base 1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
Unit
–50 V
–50 V
–6 V
–100 mA
–200 mA
200 mW
300 mW
150 ˚C
–55 to +150 ˚C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
Symbol
Conditons
ICBO
ICEO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=–40V, IE=0
VCE=–40V, IB=0
VEB=–5V, IC=0
VCE=–5V, IC=–10mA
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
IC=–10mA, IB=–0.5mA
IC=–10µA, IE=0
IC=–100µA, RBE=∞
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–10mA
R1/R2
Ratings
min
typ
–315
50
–50
–50
–0.5
–0.7
1.2
0.198
–410
200
5.1
–0.1
–0.7
–1.0
2.2
0.22
max
–0.1
–0.5
–590
–0.3
–0.9
–1.8
2.9
0.242
Unit
µA
µA
µA
MHz
pF
V
V
V
V
V
kΩ
Note:The specifications shown above are for each individual transistor.
Marking:121
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/6299MO, TS No.3190-1/2