FC120 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – High-Frequency General-Purpose Amp, Differential Amp Applications

Ordering number:EN3062A
FC120
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency General-Purpose Amp,
Differential Amp Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC120 is formed with two chips, being equiva-
lent to the 2SC3142, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2068
[FC120]
Electrical Connection
E1:Emitter1
E2:Emitter2
B2:Base2
C2:Collerctor2
B1:Base1
C1:Collector1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
1 unit
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base to Emitter Voltage Drop
Gain-Bandwidth Product
Reverse Transfer Capacitance
Base to Collector Time Constant
Noise Figure
Power Gain
ICBO
IEBO
hFE
hFE(small/
large)
VBE(large
-small)
fT
Cre
rbb'cc
NF
PG
VCB=10V, IE=0
VEB=3V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=6V, IC=4mA
VCE=6V, f=1MHz
VCE=6V, IC=1mA, f=31.9MHz
VCE=6V, IC=1mA, f=100MHz
VCE=6V, IC=1mA, f=100MHz
Note: The specifications shown above are for each individual transistor.
Marking:120
SANYO:CP6
Ratings
Unit
25 V
20 V
3V
30 mA
200 mW
300 mW
150 ˚C
–55 to+150 ˚C
Ratings
Unit
min typ max
0.1 µA
0.1 µA
80
200
0.8 0.98
1.0
15 mV
450 750
0.6
2.2
28
MHz
0.9 pF
19 ps
dB
dB
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/6169MO/5169MO, TS No.3062-1/6