FC12 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High-Frequency Amp, AM Applications, Low-Frequency Amp

Ordering number:EN3482
FC12
TR:NPN Epitaxial Plannar Silicon Transistor
FET:N-Channel Junction Silicon Transistor
High-Frequency Amp, AM Applications,
Low-Frequency Amp
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC12 is formed with two chips, being equivalent
to the 2SC4639, placed in one package.
· Common drain and emitter.
Package Dimensions
unit:mm
2075
[FC12]
Electrical Connection
Switching Time Test Circuit
C:Collector
G:Gate
S:Source
E/D:Emitter/Drain
B:Base
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Marking:12
Symbol
VDSX
VGDS
IG
ID
PD
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Ratings
Unit
15 V
–15 V
10 mA
50 mA
200 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
200 mW
300 mW
150 ˚C
–55 to +150 ˚C
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/5132MH, HK No.3482-1/5