EMH2801 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Ordering number : ENA1821
EMH2801
SANYO Semiconductors
DATA SHEET
EMH2801
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
• _{Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package}
facilitating high-density mounting
• _[MOSFET]
• _{Low ON-resistance}
• _{1.8V drive}
• _[SBD]
• _{Small switching noise}
• _{Low forward voltage (IF=2.0A, VF max=0.46V)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
Ratings
Unit
--20
V
±10
V
--3
A
--20
A
1.0
W
150
°C
--55 to +125
°C
Continued on next page.
Package Dimensions
unit : mm (typ)
7045-007
0.2
8
5
0.125
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : EMH8
TL
Electrical Connection
8
7
6
5
QA
LOT No.
1
2
3
4
http://semicon.sanyo.com/en/network
81110PE TK IM TC-00002458 No. A1821-1/5