EMH2604 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN9006
EMH2604
SANYO Semiconductors
DATA SHEET
EMH2604
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• _{Nch + Pch MOSFET}
• _{ON-resistance Nch : RDS(on)1=34mΩ(typ.)}
Pch : RDS(on)1=65mΩ(typ.)
• _{1.8V drive}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
20
--20
V
VGSS
ID
±10
±10
V
4
--3
A
IDP
PW≤10μs, duty cycle≤1%
PD
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
PT
When mounted on ceramic substrate (900mm²Ã—0.8mm)
20
1.0
1.2
--20
A
W
W
Tch
150
°C
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7045-002
0.2
8
5
0.125
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
FD
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
60111PE TKIM TC-00002607 No.9006-1/6