EMH2412_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1315A
EMH2412
SANYO Semiconductors
DATA SHEET
EMH2412
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance}
• _{Best suited for LiB charging and discharging switch}
• _{Common-drain type}
• _{2.5V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
6
A
60
A
1.3
W
1.4
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7045-006
0.2
8
5
0.125 ^EMH2412-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : EMH8
TL
Electrical Connection
8
7
6
5
LM
LOT No.
1
2
3
4
http://semicon.sanyo.com/en/network
52312 TKIM/91008PE TI IM TC-00001579 No. A1315-1/7