EMH2409_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1890A
EMH2409
SANYO Semiconductors
DATA SHEET
EMH2409
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,}
thereby enabling high-density mounting
• _{4V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
30
V
±20
V
4
A
16
A
1.0
W
1.2
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7045-006
0.2
8
5
0.125 ^EMH2409-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
LJ
TL
Lot No.
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
62712 TKIM/D1510PE TKIM TC-00002532 No. A1890-1/7