EMH2314 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN8759
EMH2314
SANYO Semiconductors
DATA SHEET
EMH2314
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=28mΩ(typ.)}
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection Diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--12
V
±10
V
--5
A
--20
A
1.0
W
1.2
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7045-002
0.2
8
5
0.125 EMH2314-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
MP
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
51612PE TKIM TC-00002667 No. 8759-1/7