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EMH1307_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications | |||
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Ordering number : ENA1715A
EMH1307
SANYO Semiconductors
DATA SHEET
EMH1307
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
⢠ON-resistance RDS(on)1 : 20mΩ(typ.)
⢠1.8V drive
⢠Protection diode in
⢠Input Capacitance Ciss=1100pF(typ.)
⢠Halogen free compliance
Speciï¬cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PWâ¤10μs, duty cycleâ¤1%
When mounted on ceramic substrate (1200mm2Ã0.8mm)
Ratings
Unit
--20
V
±10
V
--6.5
A
--26
A
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125 EMH1307-TL-H
Product & Package Information
⢠Package
: EMH8
⢠JEITA, JEDEC
:-
⢠Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
4
0.5
2.0
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : EMH8
TL
Electrical Connection
8
7
6
5
JG
Lot No.
1
2
3
4
http://semicon.sanyo.com/en/network
62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7
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