EMH1307 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1715
EMH1307
SANYO Semiconductors
DATA SHEET
EMH1307
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1 : 20mΩ(typ.)}
• _{1.8V drive}
• _{Input Capacitance Ciss=1100pF(typ.)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
Ratings
Unit
--20
V
±10
V
--6.5
A
--26
A
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : EMH8
TL
Electrical Connection
8
7
6
5
JG
Lot No.
1
2
3
4
http://semicon.sanyo.com/en/network
O2010PE TKIM TC-00002339 No. A1715-1/4