EFC4618R-P_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1123A
EFC4618R-P
SANYO Semiconductors
DATA SHEET
EFC4618R-P
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{2.5V drive}
• _{Best suited for LiB charging and discharging switch}
• _{Common-drain type}
• _{Protection diode in}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
6
A
60
A
1.6
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7069-001
1.81
43
EFC4618R-P-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TR
Marking
12
0.65
12
43
0.3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
SANYO : EFCP1818-4CC-037
TR
Electrical Connection
1
Rg
2
Rg
3
Rg=200Ω
4
FT
LOT No.
http://www.sanyosemi.com/en/network/
91912 TKIM/N0911PF TKIM TC-00002637 No. A1123-1/7