EFC4612R_12 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1477B
EFC4612R
SANYO Semiconductors
DATA SHEET
EFC4612R
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{2.5V drive}
• _{Built-in gate protection resistor}
• _{Best suited for LiB charging and discharging switch}
• _{Common-drain type}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
6
A
60
A
1.6
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7064-001
1.26
4
3
EFC4612R-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Taping Type : TR
Marking
1
2
TR
Electrical Connection
1
FN
LOT No.
0.65
1
2
4
3
0.3
Rg
2
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
Rg
3
SANYO : EFCP1313-4CC-037
Rg=200Ω
4
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O2412 TKIM/10511 TKIM/O0709PF TKIM TC-00001996 No. A1477-1/8