EFC4602 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1048
EFC4602
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC4602 ^{General-Purpose Switching Device}
Applications
Features
• 2.5V drive.
• Best suited for LiB charging and discharging switch.
• Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW≤100μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm²âœ•0.8mm)
Ratings
Unit
20
V
±12
V
6
A
60
A
1.6
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Marking : FB
V(BR)SSS
ISSS
IGSS
VGS(off)
⏐^yfs⏐
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=1.5A, VGS=3.1V
IS=1.5A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
min
20
0.5
4.5
19.5
20
23
23
Ratings
Unit
typ
max
V
1 μA
±10 μA
1.3
V
7.5
S
28
36.5 mΩ
29
38 mΩ
33
43 mΩ
38
53.5 mΩ
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
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40208PF TI IM TC-00001296 No. A1048-1/6