ECH8673 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Ordering number : ENA1892
ECH8673
SANYO Semiconductors
DATA SHEET
ECH8673
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• _{ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.)}
• _{4V drive}
• _{Halogen free compliance}
• _{Nch+Pch MOSFET}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
40
±20
3.5
30
1.3
1.5
150
--40
V
±20
V
--2.5
A
--30
A
W
W
°C
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TU
TL
Lot No.
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
D0810PE TKIM TC-00002347 No. A1892-1/6