ECH8671_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1456A
ECH8671
SANYO Semiconductors
DATA SHEET
ECH8671
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{1.8V drive}
• _{Composite type, facilitating high-density mounting}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--12
V
±10
V
--3.5
A
--30
A
1.3
W
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
ECH8671-TL-H
0.15
0 t o 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TS
TL
LOT No.
1
4
0.65
0.3
Bot t om View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
60612 TKIM/42209PE MSIM TC-00001907 No. A1456-1/7