ECH8668 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Ordering number : ENA1510
ECH8668
SANYO Semiconductors
DATA SHEET
ECH8668
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• _{The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and}
high-speed switching , thereby enablimg high-density mounting.
• _{1.8V drive.}
• _{Halogen free compliance.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
20
±10
7.5
40
1.3
1.5
150
--20
V
±10
V
--5
A
--40
A
W
W
°C
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : TP
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
Ratings
Unit
min
typ
max
20
V
1
μA
±10
μA
0.5
1.3
V
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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O2809PE TK IM TC-00002167 No. A1510-1/6