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ECH8661 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
Ordering number : ENA1777
ECH8661
SANYO Semiconductors
DATA SHEET
ECH8661
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
• The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
• 4V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
30
--30
V
VGSS
ID
±20
±20
V
7
--5.5
A
IDP
PW≤10μs, duty cycle≤1%
PD
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
PT
When mounted on ceramic substrate (900mm2×0.8mm)
40
1.3
1.5
--40
A
W
W
Tch
150
°C
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TG
TL
LOT No.
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
72110PE TK IM TC-00002431 No. A1777-1/6