ECH8651R_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1010A
ECH8651R
SANYO Semiconductors
DATA SHEET
ECH8651R
Features
• _{Low ON-resistance}
• _{2.5V drive}
• _{Common-drain type}
• _{Protection diode in}
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
• _{Built-in gate protection resistor}
• _{Best suited for LiB charging and discharging switch}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
10
A
60
A
1.4
W
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
8
5
ECH8651R-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
WV
Lot No.
TL
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7