ECH8611 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENN8127
ECH8611
ECH8611
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• _{1.8V drive.}
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board(900mm²!0.8mm)1unit
Mounted on a ceramic board(900mm²!0.8mm)
Ratings
Unit
--12
V
±9
V
--5
A
--40
A
1.3
W
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID= --1mA, VGS=0
VDS= --12V, VGS=0
VGS=±7.2V, VDS=0
VDS= --6V, ID= --1mA
VDS= --6V, ID= --2.5A
ID= --2A, VGS= --4.5V
ID= --1A, VGS= --2.5V
ID= --0.5A, VGS= --1.8V
VDS= --6V, f=1MHz
VDS= --6V, f=1MHz
VDS= --6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--12
--0.3
6.6
Ratings
Unit
typ
max
V
--10 µA
±10 µA
--1.0
V
9.5
S
30
40 mΩ
45
65 mΩ
66
95 mΩ
1230
pF
380
pF
330
pF
16
ns
190
ns
110
ns
120
ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21005PE TS IM TA-100402 No.8127-1/4