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ECH8601M_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications | |||
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Ordering number : EN1174A
ECH8601M
SANYO Semiconductors
DATA SHEET
ECH8601M
Features
⢠Low ON-resistance
⢠2.5V drive
⢠Common-drain type
⢠Protection diode in
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
⢠Built-in gate protection resistor
⢠Best suited for LiB charging and discharging switch
⢠Halogen free compliance
Speciï¬cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PWâ¤10μs, duty cycleâ¤1%
When mounted on ceramic substrate (1000mm2Ã0.8mm) 1unit
When mounted on ceramic substrate (1000mm2Ã0.8mm)
Ratings
Unit
24
V
±12
V
8
A
60
A
1.5
W
1.6
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ.)
7011A-003
Top View
2.9
8
5
ECH8601M-TL-H
0.15
0 to 0.02
Product & Package Information
⢠Package
: ECH8
⢠JEITA, JEDEC
:-
⢠Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TL
TL
Lot No.
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
50112 TKIM/72308PE TIIM TC-00001533 No. A1174-1/7
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