ECH8309_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1418B
ECH8309
SANYO Semiconductors
DATA SHEET
ECH8309
Features
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection diode in}
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--12
V
±10
V
--9.5
A
--40
A
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
8
5
ECH8309-TL-H
0.15
0 t o 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
JL
Lot No.
TL
1
4
0.65
0.3
Bot t om View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
52312 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7